This paper shows that In 1 3 Se 8 7 and In 2 0 Se 8 0 thin films can be prepared by thermal evaporation technique. Current density-voltage (J-V) characteristics and thermally stimulated currents have been obtained. Coplanar silver electrodes were used. At low voltages, the current density behavior suggests ohmic conductivity, while at higher voltages, a region of space-charge-limited current conduction was observed. The analysis of the temperature dependence of J-V curves yields the following parameters: barrier height b , energy of activation trap E t , trapping factor θ, trap density N t , and concentration of the free carriers, n 0 . The transition from ohmic to square law behavior was used to calculate all of these parameters. It was found that by increasing the In at% the trap density increased from 1.62x10 1 5 to 3.12x10 1 7 cm - 3 and the trap activation energy E t , increases from 0.062 to 0.087eV.The optical absorption of these films was studied in the UV-VIS spectral range and the value of the optical energy gap was determined. The results of changes in the J-V characteristics and optical energy gap are discussed using a simple consideration, based on average coordination numbers, cohesive energy and bond energies.