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Reliability physics of silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) is not sufficiently clear; therefore an accurate estimation method of lifetime has been strongly required. The relationship between the failure time of 4H-SiC double implanted MOSFETs under high temperature reverse bias test and the doping concentration in a drift layer was studied to clarify the...
The authors reported the optimization of the 4H-SiC V-groove Trench MOSFET (VMOSFET) structure in a previous conference (ISPSD2015). The VMOSFET has the buried p+ regions in the epitaxial layer to protect the trench bottom oxide. In this study, we characterized the long-term gate oxide reliability of the VMOSFETs under various stress conditions such as the gate bias or the drain bias. The VMOSFETs...
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