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The photo-thermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm, and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm2. Nanowire temperatures were highly dependent on the nanowire diameter,...
A method for the fabrication of large-area well-ordered periodic GaAs nanowires have been developed based on colloidal lithography and a two-step inductively coupled plasma (ICP) etching. The reflectance spectra of the GaAs nanowire samples are measured and compared with nanowires fabricated by using molecular beam epitaxy.
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