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A review is given of the different methods to extract the main parameters from a Random Telegraph Signal (RTS) occurring in the channel current of small-area Metal-Oxide-Semiconductor Field-Effect Transistors, namely, its amplitude and its average up and down time constants. The advantages of using a so-called colored Time Lag Plot will be illustrated, enabling the detection of single defects in semiconductor...
The low-frequency (LF) Noise of Ge planar pMOSFETs passivated with GeOx interfacial layer, followed by a post-Al2O3-deposition plasma treatment and fabricated in Ge-on-Si substrates, was analysed in this study. While interface state density values comparable with mid-gap Si/SiO2 can be achieved it is also important to study the density of border traps in the gate stack by LF noise. It is shown that...
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