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Advanced CMOS nodes target high-performance at lower supply voltage. High-mobility III-V channel materials have the potential to meet this target. Although III-V materials such as InGaAs are beneficial for nFET channels, SiGe (or Ge) provides better hole mobility and is more suited for pFET channels. Therefore, a InGaAs/SiGe hybrid CMOS technology is being pursued for scaled nodes. There are significant...
Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III–V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultra-shallow laser devices are realized with this concept and optically-pumped...
Interconnects have become a severe bottleneck in today's computing hardware [1]. For large-scale data centers in particular, the interconnect situation is even more severe [2]. The interconnect bandwidth and bandwidth density have to be increased on all system-levels. The ideal technology to increase the density is Si photonics (SiPh). While the integration of most of the SiPh components has been...
We demonstrate, for the first time, the 3D Monolithic (3DM) integration of In0.53GaAs nFETs on FDSOI Si CMOS featuring short-channel Replacement Metal Gate (RMG) InGaAs n-FinFETs on the top layer and Gate-First Si CMOS on the bottom layer with TiN/W inter-layer contacts. State-of-the-art device integration is achieved with the top layer InGaAs utilizing raised source drain (RSD) and the bottom layer...
It is the aim of this contribution to identify situations where predominantly physical variables affect or even control the coagulation process in a chemically controlled and optimized system. Observations in technical systems show that the mixing of coagulation chemicals can be slower or faster, depending upon the hydraulic characteristics of the mixing reactor. This leads to satisfactory destabilization...
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