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In this paper, we report for the first time, an enhancement-mode (E-mode) Al2O3/GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using CMOS-compatible techniques including gate region local thermal oxidation and organic alkaline solution (TMAH) wet etching. The fabricated MOS-HEMT exhibits a high positive threshold voltage of +2.5 V, indicating complete pinch-off of the 2...
An AlGaN/GaN high-electron-mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is proposed. The device features a metal field plate (FP) that jumps from the source over the gate region and lands between the gate and drain. The fabrication process is based on a commercially available radio-frequency GaN-on-SiC technology. Device characteristics for this work were optimized...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
This paper presents a high voltage AlGaN/GaN HEMTs with remarkable breakdown voltage enhancement by introducing a magnesium doping layer under the 2-DEG channel. The surface electric field is distributed more evenly when compare to a conventional device structure with the same dimensions. This is primarily due to the presence of a charge balanced magnesium doping layer acting as a floating field plate...
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