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A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state...
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage...
A new structure of SOI-LIGBT operated at thyristor mode with unique self-clamping character (TM-SOI LIGBT) integrated in SPICs has been studied and analyzed. We used 15 mum SOI layer and 3 mum SiO4, respectively to obtain a breakdown voltage exceeding 500 V. Comparison of not only a trade off between forward voltage drop and turn off loss but also a forward biased safe operating area (FBSOA) with...
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