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The (anode) TiN/Ti/HfO2/TiN (cathode) resistive random access memory (RRAM) has shown yield ~100%. Its simple metal-insulator-metal (MIM) structure exhibits great potential for an embedded BEOL memory compatible with the high-k/metal gate CMOS process. There have been many theories of RRAM physical mechanism in the literature. This paper focuses on HfO2-based RRAM and describes a complete physical...
A capacitorless single-transistor (1T) memory cell with a long data-retention time is demonstrated on polycrystalline silicon thin-film transistors (TFTs). A new operation mode using channel traps is employed to modulate the drain current in the accumulation region. The different drain current can be read by modulating the barrier height at the grain boundary. The extrapolated retention time at the...
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