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A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed...
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