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600 V-class superjunction (SJ)-MOSFETs were developed using our original high-resolution Scanning Spread Resistance Microscopy (SSRM) analysis technology [1] for optimization of trench filling process for the first time. The SSRM analysis is a powerful tool for the SJ structure design, because it can be achieved the measurement of two- dimensional (2D)-carrier profile and detect of minute voids. The...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Thermoelectric properties of the heavily Nb-doped SrO(SrTiO3)1 were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO3 substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO3)1 par (001) [100] LaAlO3. The thermoelectric properties of the Nb-doped SrO(SrTiO...
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