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The UV-induced damages to the gate oxide in a commercially available high-density-plasma dielectric oxide deposition system for the ultra-large integrated circuit fabrication process were analyzed systematically using the metal-oxide-semiconductor capacitors with different antenna ratio. UV-induced damages exclusively in the gate oxide were evaluated by depositing 2500Å thick oxide layer only once...
The pulse-time modulated plasma etching technology, developed more than a decade ago, has been considered as one of the best solutions to the plasma-process-induced charging damage on the gate oxide of the MOSFET. In the plasma-off state, the generation of the negative ion due to a low temperature electron attachment to the neutral radical, helps in reducing the plasma-process-induced charging damage...
In this paper, the material and electrical properties of newly developed gate dielectrics were investigated by SIMS depth profile. NMOS transistor structures were fabricated by thermally grown radical oxidation (TGRO) in a batch type thermal processor and densified by plasma re-oxidation in a slot processor, followed by post oxidation anneal process to cure the plasma damage and nitridation in N2...
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