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Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
Self-heating (SH) effects, observed during the development of SOI technology for high performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). The integration of buried oxide, with low thermal conductivity, enhances self-heating (SH) in MOS transistor devices submitted to DC HCI stress, and leads to potential erroneous HCI lifetime...
Constant downscaling of transistors leads to increase the relative difference between Lmask and Leff. Effective length (Leff) extractions are now crucial to avoid calculations errors on parameters such as the mobility, which can exceed 100% for shorter devices. We propose an industrially-adapted method to extract Leff by using an enhanced "split C-V" method. Accurate and consistent values...
Self-heating (SH) effects, which were observed during the development of silicon-on-insulator (SOI) technology for high-performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). In this paper, we propose a new methodology for lifetime prediction based on DC HCI stress for SOI technology. The SH is quantified using coupled DC HCI...
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