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In this work, we present our experimental results on Si GAA NW TFET inverters. The ambipolarity of both n- and p-TFETs was successfully suppressed by employing a drain spacer to create an intrinsic Si region between the drain and the gate, the so-called drain-gate underlap. The complementary TFET inverters show a steep transition between high/low states. Compared with the ambipolar TFET inverter,...
The chemical reactions at the higher-k LaLuO3/Ti1NX/poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing. The gate stack containing TiN/LaLuO3 with a near stoichiometric TiN layer is stable during 1000 °C, 5s anneals. Both electrical and structural characterization methods are employed...
Schottky barrier (SB)-MOSFETs with NiSi and epitaxial NiSi2 S/D contacts with gate lengths as small as 20 nm are presented. Epitaxial NiSi2 FETs show higher on-currents than corresponding NiSi devices due to its lower SB height. A striking observation is that tunnelling currents through the fairly large SB decrease at very short gate lengths in SB-MOSFETs, in contrast to the scaling behavior of conventional...
The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained...
Till now, quantized Hall devices distributed by the BIPM are used in NIM's quantized Hall resistance standard. In this paper, we report the preliminary results of quantized Hall devices with GaAs-AlGaAs heterostructures fabricated by ourselves. The device is with AuGeNi contacts for reliability consideration, but the contacts are with relatively large resistances for layer contents and annealing condition...
Ohmic contacts to 2DEG are crucial in quantized Hall resistance device fabrication. Magnetic property of the commonly used Au/Ge/Ni recipe for ohmic contact to 2DEG in a GaAs/AlGaAs heterostructure is studied in this summary paper.
In the present paper the diffusion behavior of nitrogen in Sm 2 Fe 17 has been investigated. The Curie temperatures of nitrides are experimentally found to vary in a very narrow temperature range. No other intermediate nitride with a small Curie temperature has been found. After the further annealing of non-fully nitrided powder in an Ar atmosphere, some of the nitrogen atoms,...
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