The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We introduce an innovative dual-depth shallow trench isolation (dual STI) scheme for Ultra Thin Body and BOX (UTBB) FDSOI architecture. Since in the dual STI configuration wells are isolated from one another by the deepest trenches, this architecture enables a full use of the back bias while staying compatible with both standard bulk design and conventional SOI substrates. We demonstrate in 20nm ground...
Planar fully depleted (FD) devices with thin Buried Oxide (BOX) offer the unique ability to incorporate effective back biasing which is a key enabler to build a versatile multi-Vt technology. From a dynamic standpoint, forward back bias lowers Vt and thus boost device performance, whereas reverse back bias increases Vt and thus decreases leakage [1]. From a static point of view the back gate allows...
Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.