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In this work, two different methodologies are used to quantitatively evaluate devices with metal high-k gate dielectrics for their scaling benefits over conventional polysilicon gate devices. For each method, device characteristics and ring oscillator delay calculations are performed. Our results show that aggressive channel length scaling continually provides transistor performance gain with the...
Starting with the 45 nm node, a tradeoff between performance and density exists that become more severe at the 32 nm node. An in-depth analysis of the impact of pitch and increased parasitics on device performance in the 32 nm node is presented. To counteract these effects, reduction of parasitics, gate length scaling, and aggressive stress engineering are necessary. Optimized layout using a "relaxed-pitch"...
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