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We have studied key parameters for controlling threshold voltage (Vth) variation and strain maintenance of gate first SiGe channel pMOSFETs. By overcoming 1) Ge diffusion and 2) strain relaxation during source/drain activation, we for the first time demonstrate high Ge% (50%) SiGe channel with millisecond flash anneal. Optimizing the thermal budget with millisecond anneal keeps the Vth variation same...
Varying quantum cascade laser cavity length results in gain peak selection across a 118 cm-1 range; a result of a change in threshold voltage, and applied electric field as a function of cavity length.
We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
For the first time, we illustrate the importance of process sequence for LaOx capped HfSiON/metal gate on performance, variability, scaling, interface quality and reliability. La diffusion to the high-k/low-k interface controls Vt, as well as strongly affects mobility, Nit and BTI. La diffusion is limited to the Si surface by employing SiON interface layer (IL) mitigating the issues of La-induced...
This tutorial was comprised of several parts that address various measurement methodologies required for properly characterizing high-k gate stacks. While discussing these techniques, emphasis was placed on proper instrumentation and set up, followed by proper data analysis and interpretation. Some of the key methodologies that were discussed are: capacitance-voltage (C-V), pulsed current-voltage...
One of the major design verification challenges in the development of Anton, a massively parallel special-purpose machine for molecular dynamics, was to provide evidence that computations spanning more than a quadrillion clock cycles will produce valid scientific results. Our verification methodology addressed this problem by using a hierarchy of RTL, architectural, and numerical simulations. Block-...
The origin of stress induced leakage current and defect generation process in the high-k/metal gate stacks under the substrate hot carrier stress and constant voltage stress is investigated. The data suggests that the defects responsible for the SILC increase are located near the high-k/SiO2 interface. Generation of these defects is mostly caused by the cold carriers injected from the inversion layer...
This paper reports an overview of the new Nereus hybrid underwater vehicle and summarizes the vehicle's performance during its first sea trials in November 2007. Nereus is a novel operational underwater vehicle designed to perform scientific survey and sampling to the full depth of the ocean of 11,000 meters - almost twice the depth of any present-day operational vehicle. Nereus operates in two different...
The Hybrid Remotely Operated Vehicle (HROV) Nereus, developed by the Woods Hole Oceanographic Institution (WHOI) with the support of the Space and Naval Warfare Systems Center San Diego (SSC San Diego) and the Johns Hopkins University, is intended to provide a new level of access for deep oceanographic research to a maximum depth of 11,000 meters. Nereus operates in two different modes. The vehicle...
Today, many software projects are being developed by collaborating programmers working across multiple locations. Whatever the reason may be, outsourcing, organizational structure, or external collaboration, these projects often suffer from the physical separation of developing across the city, across the country, or around the world. Such distances intensify challenges such as peer communications,...
This paper reports on how a mobile learning system entitled AMPLe (across mobile platform learning system) was integrated in an elementary school setting to support outdoor learning scenarios. Ninety-six students from 3 classes of NH Elementary school participated in this study. The results reveal that the students were overwhelmingly positive with uses of AMPLe with various mobile devices. However,...
For the first time, we provide mechanistic understanding of high gate leakage current on surface channel SiGe pFET with high-k/metal gate to enable sub 1 nm EOT. The primary mechanism limiting EOT scaling is Ge enhanced Si oxidation resulting in a thick (1.4 nm) SiOx interface layer. A secondary mechanism, Ge doping (ges4%) in high-k, possibly by up diffusion, also results in higher leakage. With...
We report on new observations of hot carrier (HC) degradation in strained Si/Si1-xGex(x = 0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish the energy distribution of the interface traps. High-K dielectrics on SiGe p-channel show higher interface traps generation located close to conduction...
We proposed a novel method (DBB: designed based binning) by using design and defect inspection information to detect marginal design features. This method was used to identify a pattern failure problem (hammer head) which occurred during production early ramp (65 nm device). The traditional approach could not detect this hammerhead problem due to the intermittent nature and low defect count. This...
La-doped HfSiO samples showed lower Vth and Igate, which was attributed to the dipole formation at the high-k/SiO2 interface. With increasing SiOx content, significant mobility degradation was observed, most likely due to additional La- related charges in the interfacial layer. La-doped devices demonstrate better immunity in the PBTI test and low charge trapping efficiency compared to the control...
We demonstrate for the first time a gate first high-k/metal gate (MG) nFET with EOT = 0.74 nm (Tinv = 1.15 nm), low Vt = 0.30 V, high performance [Ion/IOff = 1310(muA/um) at 100(nA/um)], low leakage (> 200x reduction vs. SiO2/PolySi) and good PBTI. Low-k interface layer scaling and high-k La-doping enable this desirable EOT and Vt. SiON/HfLaSiON can give similar interface quality as SiO2/HfSiON...
Advances of handheld devices such as a PDA afford learners to conduct synchronous discussions and individual ideas made in a group could be synthesized easily. To achieve effective group learning in the classroom, we proposed a PDA-based English vocabulary acquisition game entitled Wireless Crossword Fan-Tan Game (WiCFG) that facilitates English vocabulary building for constructive learning environment...
An effective special-purpose supercomputer for molecular dynamics (MD) requires much more than high-performance acceleration of computational kernels: such accelerators must be balanced with general-purpose computation and communication resources. Achieving this balance was a significant challenge in the design of Anton, a parallel machine that will accelerate MD simulations by several orders of magnitude...
Anton is a massively parallel special-purpose supercomputer designed to accelerate molecular dynamics (MD) simulations by several orders of magnitude, making possible for the first time the atomic-level simulation of many biologically important phenomena that take place over microsecond to millisecond time scales. The majority of the computation required for MD simulations involves the calculation...
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