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The study of local Random Telegraphic Noise (RTN) in HfO2 dielectric blanket films using Scanning Tunneling Microscopy (STM) is presented in this work. Analysis of the trap spectroscopy in the dielectric by low-voltage sensing of RTN signals at different stages of stress induced leakage current (SILC) degradation and subsequent breakdown has been performed. This technique is well suited to analyze...
Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may cause localized non-random trap generation during the percolation breakdown (BD) process. We study the effect of this non-random trap generation on the reliability statistics of the metal gate (MG) - high-κ (HK) stack. For the first time, we propose a fundamental physics-based Kinetic Monte Carlo (KMC)...
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