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High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people's concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <;110>...
Analog and digital ICs are built up with bipolar or MOS (Metal Oxide Semiconductor) transistors. Such miniaturized transistor structures can fail when the thermo-mechanical stress becomes critical. The main aim of this work is to analyze the thermo-mechanical stress in integrated devices. Different approaches have been proposed to determine the thermo-mechanical stress effect in an IC device, based...
We have developed high density, integrated nanowire array devices that can be used for multiple purposes - chemical sensing and manipulation of chemical reactions at nanoscale. High density silicon nanowire (SiNW) sensor array allows electrical addressing of each individual nanowire for localized sensing and chemical reaction control at high spatial resolution. At the low voltage mode (50-100 mV),...
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