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In this study, the LED samples were grown by metalorganic chemical vapor deposition (MOCVD) on 430 mum-thick c-plan sapphire substrates. The layer sequence consisted of a 25.0 nm GaN nucleation layer followed by a 2.0 mum-thick undoped GaN buffer layer, a 2.0 mum-thick Si-doped GaN conduction layer, a active region composed of five 2.5 nm-thick In0.23Ga0.77N QWs separated by 12.0 nm-thick GaN barriers,...
In this work, we modified the p-type epitaxy structure to improve the p-type metal-semiconductor ohmic contact. Further, we investigated the electrical and optical properties by adjusting the p-type cladding layer structure in the InGaN/GaN MQW samples.
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