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Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as −40V. Only time dependent...
<para> In this brief, AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using an electron-beam-evaporated praseodymium oxide layer in a high-oxygen-flow environment during the gate-dielectric-layer formation was studied. By adjusting the oxygen flow rate in an electron-beam evaporator chamber, the highest Pr content in ...
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