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This paper presents an improved negative differential mobility model for GaN and AlGaN to simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters vsat, Ec, α, δ, and γ are proposed to improve the accuracy of the mobility model at high temperatures. In particular, an Al-composition-related coefficient fZ(x) and a random-alloy-potential-related factor falloy(p) are developed...
A comprehensive model for the electron mobility in AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The proposed model describes the variation of the field-dependent mobility with carrier concentration,...
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