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The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally...
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited by ion beam sputtering technique. Sheet resistance...
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the nucleation. Various tests were carried out to characterize...
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