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Recent advances in integrated photonic devices for next-generation Ethernet are described. In particular, 1.3-μm-range uncooled photonic devices (namely, electroabsorption modulator integrated lasers, directly modulated lasers, and lens integrated devices) are focused on. A key technology for uncooled operation is an InGaAlAs multiple quantum well (MQW), which produces a strong electron confinement...
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we have investigated the several key technologies. Newly developed 1.3 mum range 25 Gbps and 43 Gbps EA/DFB laser showed a good transmission performance over 10 km single mode fiber...
A 1.3-mum-range EA/DFB laser demonstrated 43-Gbps 10-km transmission for the first time. The laser achieved clearly opened eye diagrams with dynamic extinction ratio of over 7-dB over wide temperature range.
Uncooled 10-Gbps, 1.55-mum InGaAlAs EA/DFB laser has been realized. Error free 80-km transmission was demonstrated up to 95 degC. A power penalty below 2-dB with over 9.8-dB dynamic extinction ratio was achieved over wide temperature range.
10-Gbps, 80-km transmission was achieved by a wavelength-tunable EA/DFB laser with 8-channels and 100-GHz spacing. A dynamic extinction ratio over 10-dB and a power penally below 2-dB were achieved over 5.6-nm continuous wavelength tuning range.
Uncooled 1300-nm range 25-Gbps EA/DFB lasers that support cost-effective optical transmitter for 100-Gbps Ethernet has been realized. A wide temperature ranged 12-km transmission with over 9.6-dB dynamic extinction ratio was demonstrated.
Uncooled 10-Gbit/s, 80- km SMF transmission was demonstrated for the first time using a 1.55-μm InGaAlAs EA/DFB laser. A power penalty below 2-dB was achieved over a wide temperature range from 15°C to 95°C.
New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission and 40-Gbit/s operation were achieved up to 85degC
A highly efficient (2 V peak to peak for 22 dB extinction ratio) and extremely low-chirp (<64 pm) integrated electroabsorption modulator/DFB laser is demonstrated by reducing both electrical and optical crosstalk between the modulator and the laser. The device allowed 2.5 Gbit/s penalty-free transmission over repeaterless 200 km-long 1.3 mu m-optimised singlemode fibre.<<ETX>>
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