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High quality, bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1‐xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid‐ultraviolet light emitting diodes with peak wavelengths in the range of 240‐260 nm. From transmission electron microscope images, it was confirmed that the dislocation density in the n‐type Al0.7...
Low dislocation density, epitaxial layers of AlxGa1–xN are grown pseudomorphically on native AlN substrates prepared from high quality, bulk crystals. In addition to low dislocation density, they are atomically smooth and can be doped n‐type to obtain sheet resistances < 200 Ohms/sq/μm. These layers are used as templates for the growth of high quality multiple quantum well (MQW) structures and...
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