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Due to large exciton binding energy, ZnO/ZnMgO heterostructures are promising for modern optoelectronic devices in UV range. We report on the metal‐organic vapor phase epitaxy (MOVPE) growth of ZnO, ZnMgO layers and periodic ZnO/ZnMgO MQW structures at atmospheric pressure of hydrogen using diethylzinc (DEZ), bismethyl‐cyclopentadienil‐magnesium ((MeCp)2Mg) and tertiary‐butanol (t‐BuOH) as precursors...
The latest results on MOVPE growth of thick ZnSSe, ZnMgS epitaxial layers and MQW structures on their base are presented. The structures were grown on GaP substrates with different missorientation from (100) plane using ZnEt2, (MeCp)2Mg, Et2S2 and Et2Se as precursors at 490‐530 °C. The growth conditions of epilayers and periodic structures on substrate tilted by 10° to (111)A plane with high luminescence...
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