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The cover picture of this issue of Phys. Status Solidi C has been taken from the article by Marina Panfilova, Alexander Pawlis, Alexey Shchekin, Sergey Lemeshko, and Klaus Lischka, Phys. Status Solidi C 7(6), 1675 (2010).
Strain in the semiconductor multilayer structures of lasing devices has an important influence on their optical properties. Micro‐Raman spectroscopy is a suitable technique for non‐destructive direct analysis of the structural properties of semiconductor structures. The strain distribution in ZnMgSe/ZnSe microdisks has been measured by micro‐Raman spectroscopy. The frequency of the ZnSe longitudinal...
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