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Three‐scale model for the calculation of 2DEG mobility in AlGaN/GaN heterostructures developed by our group earlier was used for the investigation of the dependence of 2DEG concentration and mobility on the Al concentration in AlGaN layer. The model allows to calculate following 2DEG properties: energy levels, corresponding wavefunctions, potential energy distribution, charge carriers concentration...
The computational scheme of multiscale modeling of semiconductor heterostructures is presented. Three scale levels are taken into account. On the atomic level the system is described using crystallographic information and quantum‐mechanical model. Ab initio modeling allows to determine the electronic structure, define polarization effects and calculate charge densities on the interfaces between layers...
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