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Compared to silicon substrates, III–V materials based on GaAs and/or InP are generally limited to small diameters, up to 150 mm for GaAs and 100 mm for InP, even though bulk wafers of 150 mm diameter have already been sampled. Herein, a new technology is proposed to extend the diameter of these materials by combining the Smart Cut technology, which is based on wafer bonding and layer transfer techniques,...
Large‐Diameter III–V Materials on Si Substrates
Compared to silicon substrates, III–V materials (GaAs, InP, ect) are limited to small diameters. In article number 2100543, Bruno Ghyselen and co‐workers propose to extend the diameter range of the III–V materials by combining the Smart Cut process (a wafer bonding and layer transfer technique, Smart Cut is a registered trademark of the company SOITEC)...
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