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Thick hydride vapor phase heteroepitaxy of some III–V, II–VI, and III–VI binary and ternary semiconductor materials such as GaAs, GaP, GaP, GaAsxP1‐x, ZnSe, and GaSe is performed on GaAs substrates and orientation‐patterned GaAs templates. Up to 500 μm thick GaAs, GaP, GaP, GaAsxP1‐x, and ZnSe layers are deposited in single growths or after a regrowth. The GaSe layers deposited through van der Waals...