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Herein, the influence of heat treatment at 400 °C on the spectrum of boron intracenter transitions in silicon using IR absorption spectroscopy is investigated. In the transition region from the ground 1Γ8+ state associated with the p3/2 valence band of Si to the odd‐parity excited states of boron, a new absorption line with its maximum at 261.3 cm−1 is observed in the thermally treated boron‐doped...
The data on the features of the electronic absorption in boron‐doped silicon irradiated at 80 K with 5 MeV electrons are presented in this paper. The electronic transition at a frequency of 4296.8 cm–1 is revealed in the absorption spectra of as‐irradiated boron‐doped Si samples. The intensity of the registered line grows with the boron concentration. The formation of defect responsible for the 4296...
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