The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Local p‐type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi‐energy implantations were performed to achieve a “box‐like” profile. SIMS measurements showed unexpected deep Mg profile due to defect‐assisted channeling in the GaN. In addition, a high‐density defect region induced...