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artykuł

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

Vladimir P. Markevich, Matthew P. Halsall, Lijie Sun, Iain F. Crowe, więcej

physica status solidi (b) > 260 > 8 > n/a - n/a

Results of a deep‐level transient spectroscopy (DLTS) study of trapping states in Ni/Au Schottky diodes made on Si‐doped GaN layers grown by metal–organic vapor‐phase epitaxy (MOVPE) on highly conductive n‐type Ammono‐GaN substrates are reported. In all as‐grown samples, the DLTS signals due to traps with the activation energies for electron emission (E_em) of about 0.26 and 0.60 eV (referred to as...

artykuł

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, więcej

physica status solidi (a) > 215 > 10 > n/a - n/a

The hot electron transistor (HET) is an unipolar majority carrier vertical device with great potential for high frequency (THz) applications. Recently, graphene (Gr) heterostructures with Nitrides have been considered as a promising material system to implement this device concept, with GaN/AlGaN (or GaN/AlN) working as emitter/emitter‐base barrier and Gr as the ultrathin base enabling ballistic...

artykuł

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)

Vytautas Janonis, Vytautas Jakštas, Irmantas Kašalynas, Pawel Prystawko, więcej

physica status solidi (b) > 255 > 5 > n/a - n/a

In article no. 1700498, Janonis et al. discuss the structure design and excitation peculiarities of surface phonon polariton modes in AlGaN/GaN high electron mobility transistor (HEMT) structures grown either on GaN or SiC substrates. Wide band gap materials possess large splitting between transverse optical (TO) and longitudinal optical (LO) modes, their employment is convenient for fundamental research...

artykuł

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

Vytautas Janonis, Vytautas Jakštas, Irmantas Kašalynas, Pawel Prystawko, więcej

physica status solidi (b) > 255 > 5 > n/a - n/a

Reflectivity of the plasmon–phonon modes in grating‐coupled AlGaN/GaN heterostructures grown either on GaN or on SiC substrates were studied across the Reststrahlen band of semiconductors. The reflection spectra are experimentally obtained and fitted with the numerical data modeled using a rigorous coupled wave analysis method. Analysis of the field plots revealed that the origin of the intense multipeak...

artykuł

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Ignas Grigelionis, Vytautas Jakštas, Vytautas Janonis, Irmantas Kašalynas, więcej

physica status solidi (b) > 255 > 5 > n/a - n/a

In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at temperatures above 80 K. The samples are excited with electric field pulses of up to 300 V cm⁻¹ and duration of

τ_{p} = 1.6

ms. The THz emission spectra are measured in vacuumed environment by means of infrared Fourier transform spectroscopy. Resonant 1s...

artykuł

AlGaN HEMTs on patterned resistive/conductive SiC templates

Pawel Prystawko, Marcin Sarzynski, Anna Nowakowska-Siwinska, Danilo Crippa, więcej

Journal of Crystal Growth > 2017 > 464 > C > 159-163

High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut (~0.45°), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2–8°). In the present work we show a lateral patterning...

artykuł

Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates

Piotr Kruszewski, Mikolaj Grabowski, Pawel Prystawko, Anna Nowakowska‐Siwinska, więcej

physica status solidi (a) > 214 > 4 > n/a - n/a

The current–voltage characteristics of planar Ni/Au Schottky diodes fabricated on top of AlGaN/GaN structures with two different surface miscut, 0.5 and 2°‐off, were measured at elevated temperatures of up to 580 K and then discussed. The Schottky contact parameters, such as ideality factor (n) and barrier height (φ_b), were extracted by a commonly used thermionic emission approach, combined with...

rozdział

Novel approach of top-down GaN nanorods fabrication

Marek Ekielski, Marek Wzorek, Marcin Juchniewicz, Eliana Kaminska, więcej

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) > 967 - 970

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

GaN nanorods have been formed by inductive coupled plasma (ICP) etching in BCl3/Cl2 plasma. Nanostructures were formed only in the initially titanium masked area, wherein the dimensions of mask pattern do not define dimensions of nanorods, but the region of structure formation only. It has been found that density of nanorods strongly depends on process parameters, such as RF and ICP power, and gas...

artykuł

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, więcej

physica status solidi (a) > 212 > 5 > 1091 - 1098

In this work, the electrical and structural properties of Ti/Al contacts on AlGaN/GaN heterostructures with a different crystalline quality were investigated. In particular, the sample with a lower defects density required a higher temperature (800 °C) to obtain Ohmic contacts, while the more defective sample showed Ohmic behaviour at lower annealing temperature (500 °C). The susceptibility to oxidation...

artykuł

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Andrzej Taube, Eliana Kamińska, Maciej Kozubal, Jakub Kaczmarski, więcej

physica status solidi (a) > 212 > 5 > 1162 - 1169

In this work, we report on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistors (HEMTs) using Al and C ion implantation. Our methodology was to maintain uniform vacancy concentration (>4 × 10²⁰ cm⁻³) up to the depth of 0.7 µm for both ion species. Electrical measurements have shown that after implantation, the sheet resistance was 1 × 10¹¹ Ω/□ and increased...

artykuł

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Robert Czernecki, Ewa Grzanka, Julita Smalc-Koziorowska, Szymon Grzanka, więcej

Journal of Crystal Growth > 2015 > 414 > C > 38-41

InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire substrates using the metalorganic vapor-phase epitaxy in order to study the influence of hydrogen during the growth of the GaN barriers. This hydrogen flow had the following effects on the structures: (i) the thickness of the QWs was reduced, (ii) the indium concentration in the QWs was decreased and (iii) the growth...

artykuł

Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

Christophe Consejo, Pawel Prystawko, Wojciech Knap, Anna Nowakowska-Siwinska, więcej

IEEE Sensors Journal > 2015 > 15 > 1 > 123 - 127

Physical mechanism responsible for hydrogen sensing by AlGaN/GaN transistors was investigated. Original resistance studies versus magnetic fields (up to 8 T) were used to determine precisely hydrogen-induced change of carrier mobility and density. Results clearly show that the carrier mobility change is responsible for <5% and that the hydrogen sensitivity is mainly related (more than 95%) to the...

artykuł

High-power laser structures grown on bulk GaN crystals

Pawel Prystawko, Robert Czernetzki, Lucy Gorczyca, Grzegorz Targowski, więcej

Journal of Crystal Growth > 2004 > 272 > 1-4 > 274-277

High-pressure-grown bulk GaN crystals have the best reported structural quality and the lowest defect density among all available GaN substrates. We report on MOVPE growth, device processing and properties of high-power laser structures on such substrates. In this work, we describe very high optical output power per laser facet of 1.9W from single LD device with 15μm×500μm cavity. The measured value...

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Wyniki wyszukiwania dla: Pawel Prystawko

Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

AlGaN HEMTs on patterned resistive/conductive SiC templates

Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates

Novel approach of top-down GaN nanorods fabrication

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

High-power laser structures grown on bulk GaN crystals

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