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The strain‐compensation (SC) technique to reduce the accumulation of strain is a promising approach to increase the design flexibility as well as the performance of quantum dot (QD) lasers. Here we have studied the application of tensile‐strained ultra‐thin GaP layers into multiple stacked InAs/GaAs QD grown by MBE. XRD analysis shows the controllability of the average strain in multiple‐stacked QD...
We present a novel structure of GaAsP nano apertures realized by employing the in situ thermal diffusion of phosphorus during epitaxial growth on top of quantum dot layers. Such structures may have direct device‐oriented applications for the selective injection of electrical current into the dots. AFM and cross‐sectional SEM images reveal that we are able to create elongated apertures in a diffusion...
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