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In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)
In this paper, a new field-effect transistor (FET), silicon on partial insulator with block oxide (bSPI), is presented. To fabricate this novel device architecture, a sidewall spacer process is also exploited. For bSPIFET, this block oxide can block the most parts of the p-n junction between the substrate and the source/drain (S/D) region; thus, the junction leakage current is reduced dramatically...
In this paper, we propose a novel fully depleted silicon-on-insulator MOSFET with block oxide enclosed body (bFDSOI). To differ with the conventional FDSOI MOSFET, the proposed SOI structure shows enhanced performance by exploiting sidewall spacer process. For this new bFDSOI device, the electric field between the body and the source/drain (S/D) region is restrained by the block oxide resulting in...
This paper is submitted with an investigation concerning the effects of the Si thickness-induced variation of the electrical characteristics in the FDSOI with block oxide. We noticed that the traditional sidewall spacer process is used and processed to produce the block oxide enclosing the Si-body in our proposed structure, the undesirable ultra-short-channel effects can be significantly diminished...
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