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Investigations of stress distributions and material quality across a 75‐mm wafer consisting of device‐quality GaN integrated with a diamond substrate are presented. Stress in the GaN are mapped both over the full wafer and across the layer along the growth direction. Ultraviolet (UV) and visible micro‐Raman and UV photoluminescence (PL) spectroscopy from both sides of the wafer reveal an unexpected...
The control of diamond nucleation and the early stages of diamond growth are essential for control of the diamond properties that are sensitive to or directly depend on the film anisotropy, grain size, and microscopic voids in the film. This phenomenon particularly affects the thermal conductivity of thin diamond films. Measuring the thermal conductivity/thermal diffusivity of material like diamond...
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