The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Investigations of stress distributions and material quality across a 75‐mm wafer consisting of device‐quality GaN integrated with a diamond substrate are presented. Stress in the GaN are mapped both over the full wafer and across the layer along the growth direction. Ultraviolet (UV) and visible micro‐Raman and UV photoluminescence (PL) spectroscopy from both sides of the wafer reveal an unexpected...
We have studied the structure and composition of the interface of diamond thin films deposited on Si substrates by chemical vapor deposition using atomic resolution electron microscopy, and electron energy loss spectroscopy. The latter technique allows the analysis of the relative Si to C composition as well as the nature of the bonding to determine the relative sp2/sp3 content of the diamond film...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.