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The structural changes in the surface layer of p‐type Cz‐Si(001) samples after high‐dose low‐energy (2 keV) He+ plasma‐immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high‐resolution X‐ray reflectometry, high‐resolution X‐ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three‐layer structure...