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We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (~50μm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.
The behavior of barrier engineered charge trapping devices incorporating Al2O3 and HfO2 high-K layers has been critically examined. We propose to use a thicker buffer oxide (≫ 6 nm) and thin (≪5nm) high-K top capping layer for BE-MAONOS and BE-MHONOS in order to improve the reliability. Thinner high-K top capping layer reduces the fast initial charge loss under high-temperature baking. Moreover, it...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high...
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial...
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