The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High-k/Ge with strontium germanide interlayer has been applied for both p- and n-MISFETs. The observed Jg-EOT trend in the Ge-MISCAPs exhibits comparable or superior leakage characteristics to that of state-of-the-art HfSiON gate dielectrics on Si down to an EOT of 0.96nm. The drive current of the p-MISFETs increases with the EOT scaling around 1nm without μeff degradation. Furthermore, reasonable...
Anomalous threshold voltage increase with area scaling of Mg- or La-incorporated high-k gate dielectrics has great impact on scaled devices. This paper reveals that much amount of Mg or La capping effects for Vt reduction was disappeared with the increase of electron mobility in narrow channel nMISFETs. This phenomenon is explained with absorption of Mg and La into STI from bulk high-k layer. The...
Appropriate Ge surface control and resulting formation of Ge MIS interfaces with superior interface properties are one of the most critical issues in realizing high performance Ge MISFETs. This paper reviews our recent results on the physical and electrical properties of Ge MIS interfaces fabricated by direct oxidation and nitridation of Ge surfaces, which are expected to form the interface control...
Ge-MISFETs have attracted much attention as next generation MOSFETs because of their higher carrier mobility than Si-MOSFETs. However, it has been regarded as extremely difficult to form a gate stack structure with good quality because surfaces of Ge and the oxide films are very unstable thermally and chemically. Therefore, establishment of a surface passivation technique is one of the most important...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.