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We have succeeded in suppressing random threshold voltage (Vth) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y2O3-layers on HfSiON films, Vth fluctuations are the same as with non-capped samples, while maintaining excellent Vth controllability (|??Vth| > 180 mV). Furthermore, the devices exhibit high device...
We have proposed inhibition mechanism of common Al-capping technique for pMOSFET threshold-voltage (Vth) control for the first time, and have established effective Ti-capping technique using metal gate and Hf-based high-k dielectrics. Ti-capping technique can adjust lower Vth than Al-capping one due to the suppression of counter dipole and solid solubility limit in doping. Moreover, Ti-capping technique...
We have presented functional annealing data using the FSP-FLA (flexibly-shaped-pulse flash lamp annealing), together with some examples of the multi-functionality. First, we showed that the FSP-FLA can control thermal budget whilst sustaining high dopant activation, recovering crystalline defects, and controlling thermal diffusion length. Secondly, by combining impulses from conventional FLA and the...
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