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In this paper, the application of hetero-gate-dielectric (HGD) and source-pocket (SP) in a double-gate tunnel field-effect transistor (TFET) is proposed for the first time to simultaneously boost the on-current and suppress the ambipolar current. Quasi-two-dimensional (2D) potential and electric field analytical models for the HGD-SP TFET are developed by solving 2D Poisson's equation with matching...
On the basis of quasi‐two‐dimensional solution of Poisson's equation, an analytical threshold voltage model for junctionless dual‐material double‐gate (JLDMDG) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is developed for the first time. The advantages of JLDMDG MOSFET are proved by comparing the central electrostatic potential and electric field distribution with those of junctionless...
Based on the parabolic approximation, a new analytical model for junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is presented. The influence of transition between depleted channel and the source/drain neutral region on the channel's potential is considered in presented model. Using this analytical model, the electrostatic potential of JLCSG MOSFETs is investigated. The accuracy of the analytical...
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