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We investigate RF performances and hot carrier effects of nMOSFETs at cryogenic temperature. RF performances of HfO2 dielectric nMOSFET at 77 K are improved more than those of SiO2 dielectric nMOSFET although DC performances are improved similarly. The nMOSFET with HfO2 dielectric has 127.4 GHz fT and 75.4 GHz fmax at 77 K. In hot carrier injection measurement, gm of HfO2 nMOSFET at 77 K is degraded...
This study presents a 70-nm nMOSFET degradation by hot carrier stress. The DC performance drifts of the device due to hot carrier stress are examined experimentally before and after stress for a 70-nm nMOSFET. Although the substrate current of a 70-nm nMOSFET has different characteristics from that of a long channel device, it can be a good indicator of hot carrier stress. The industrial practice...
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