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We investigate RF performances and hot carrier effects of nMOSFETs at cryogenic temperature. RF performances of HfO2 dielectric nMOSFET at 77 K are improved more than those of SiO2 dielectric nMOSFET although DC performances are improved similarly. The nMOSFET with HfO2 dielectric has 127.4 GHz fT and 75.4 GHz fmax at 77 K. In hot carrier injection measurement, gm of HfO2 nMOSFET at 77 K is degraded...
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