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Nowadays, systems for various smart city industries such as city power plants, public transportation and integrated modular avionics are becoming increasingly complicated, with most of components being embedded and geologically distributed. In order to ensure the availability of target systems, prognostic and health management develops as an important system to assess the current health state and...
The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
Purpose: The primary objective of this study was to assess the performance of a preclinical micro PET/CT (ARGUS-SEDECAL) via GATE, Geant4 Application for Tomographic Emission, a virtual platform for tomographic emission simulation. Methods: By using GATE, we were able to accurately reproduce the physics of a PET scanner, including such as the instrument's parameters, and the data collecting system...
Thin-film transistors (TFTs) based on solution-processed Zinc-Tin oxides (ZTO) of different Zn:Sn compositions are investigated. The solution-processed ZTO TFTs show rather high device performances, with the mobility up to 15 cm2/V-s, the on/off ratio up to 106~107 and a subthreshold slope <;0.6 V/decade.
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