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Conductive atomic force microscopy (CAFM) was used to investigate nano-electric performances of semiconductor MOS (metal-oxide-semiconductor) devices. Due to the small tip size (as small as ∼20 nm for PtSi probes), CAFM is capable of imaging both topography and current information of nano-device structures simultaneously with very high lateral resolution. Due to the use of wide ranges of current amplifier...
This paper presents a terahertz (THz) spectrometer based on high temperature superconducting Josephson junction. The YBa2Cu3O7 (YBCO) bi-crystal Josephson junctions (JJS) with log-periodic antennas are used as detectors. In the low temperature, with the signal measurement, data acquisition and human-computer interactive system, the automatic measurement system of THz spectrometer is finally accomplished...
This paper presents a systematic characterization of a 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device characteristics are measured by taking into account of trapping induced effects such as current collapse and threshold voltage instability. Switching performance is evaluated up to 400 V, 10 A using a custom designed double-pulse test circuit. Optimal gate...
Emerging UV to blue light emitting scintillation materials promise improved radiation detection capabilities such as dual neutron-gamma detection and higher energy resolution. The use of traditional photomultiplier tubes (PMTs), with their associated high-voltage electronics often represents form factor and power-limiting component. The unique capabilities of a solid-state photomultiplier (SSPM) provides...
We have experimentally demonstrated monolithically integrated 600-V enhancement-/depletion-mode (E/D-mode) SiNx/AlGaN/GaN MIS-HEMTs that feature high drive current, high breakdown voltage, large gate swing, low ON-resistance, low OFF-state leakage, and low current collapse. By employing the integrated E/D-mode devices, a high-voltage low-standby-power start-up circuit for off-line switched-mode power...
Oxide-relief and Zn-diffusion structures are realized in 850 nm VCSELs. Both record-low energy-to-data-rate ratio (96 fJ/bit at 25 Gbit/sec; 135 fJ/bit at 37 Gbit/sec) and energy-to-data distance ratio 175 fJ/bit.km at 25 Gbit/sec are demonstrated.
A novel phase change memory (PCM) cell with Additional Top Electrode (ATE) is introduced to investigate the scaling behavior of the off-state with the dimension of amorphous state region. The electrical conduction in ultra-thin amorphous state layer is investigated. The trap spacing is one of the key parameters that govern the conduction mechanism and threshold voltage in the sub-threshold region...
Metal-insulator-semiconductors structures (MIS) with a layer of silicon nanocrystals embedded within two SiO2 layers are fabricated by using plasma enhanced chemical vapor deposition. By using current-voltage (I-V) measurements with different sweep rates, we study the mechanism of electrons and holes charging/discharging characteristic of the MIS structures. Distinct current peaks duo to electrons...
In an effort to better understand the process of charge transport in extended chain aromatic hetero-cyclic polymers we have made detailed studies of d.c. conduction in one such rigid rod polymer, viz. poly(p-phenylene benzobisthiazole) or PPBT *** Two types of transient currents have been measured. One of these is the gradual decay of current over a long period of time in a PPBT sample exposed to...
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