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This paper proposes a high power density inverter utilizing SiC metal‐oxide‐semiconductor field‐effect transistor (MOSFET) modules and an interstitial via hole (IVH) printed circuit board (PCB) for a motor drive system. The inverter also includes a power circuit, heatsink, cooling fan, gate drive circuit, and DC capacitors. The output power density of the proposed inverter is 81 kW/L. The inverter...
We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si-FWD more than 60 percent.
SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.
A newly developed module with wirebond-less structure is investigated. This structure has multi-pin attached interconnection structure implanted into power circuit board with connecting line between chips and other elements inside the power module. Additionally, heat-spreader-like copper blocks bonded to ceramic insulated substrates performing high thermal conductivity, enable to realize high current...
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