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In this paper, it is researched that how I-V characteristics and piezoresistance coefficient of GaAs-based HEMT-embedded accelerometer change when different temperatures are set. It is shown that saturation current of device would go down if the temperature goes up, which is about 3.1467mA/°C, based on the research. However, the device can work well at the temperature range of -50°Cto 50°C, which...
The micro-structure of GaAs HEMT build-in cantilevers-mass was designed and fabricated. GaAs HEMTs were embeded at the root of cantilevers for increasing the sensitivity to external force. In our experiments, it has been proved that the sensitivity of GaAs HEMT is higher than that of silicon by the Mechanical-Electrical coupling characteristics. The magnitude of the external force was then calculated...
A novel nano electro mechanical system (NEMS) accelerated sensor was presented in this paper. The accelerated sensor is based on piezo-resistive effect of GaAs/AlAs/InGaAs pseudomorph-high electron mobility transistor (PHEMT). Piezo-resistive effect of field effect transistor (FET) is analyzed, the structure of the sensor and its sensitive element are designed, and process is introduced. Abecedarian...
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