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Graphene is a promising two dimensional channel material for radio frequency field effect transistors (RF-FET)[1]. It has ambipolar carriers with high mobility and high saturation velocity. It also has excellent mechanical robustness and flexibility. Due to these intrinsic properties, graphene based FETs can be applied to flexible, wearable components for RF applications such as high speed wireless...
In this paper, we report an accurate physics-based compact model for monolayer Graphene Field-Effect Transistors (GFETs) based on the density of states (DOS) of monolayer graphene. The charge-based model computes the total current considering a branch separation between the electron and hole contributions preserving a good accuracy near the Dirac point. The effect of back-gate is included in the charge...
In this paper, we report the low-frequency noise characterization of CVD -grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of...
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