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A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and controllable triggering voltage and fine heat dissipation capability are achieved.
Two novel structures for explicit-pulsed flip-flops are proposed in this paper. The charging and discharging time are greatly reduced due to the lower capacitive load of interval nodes in the new structures, and the short circuit power consumption is diminished by overcoming the race problem as well. Simulation results also indicate the new structures are ideal for high-speed and low-power digital...
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