The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Two novel lanthanide metal–organic framework (Ln‐MOF) luminescent sensors for the detection of picric acid have been successfully assembled. Following a function‐oriented strategy, urea hydrogen‐bonding functional sites were introduced into two MOF frameworks. A structural analysis indicated that the two MOFs have the exact same structure, namely 2D layers with diamond‐shaped holes that are accumulated...
Processing-in-memory (PIM) provides high bandwidth, massive parallelism, and high energy efficiency by implementing computations in main memory, therefore eliminating the overhead of data movement between CPU and memory. While most of the recent work focused on PIM in DRAM memory with 3D die-stacking technology, we propose to leverage the unique features of emerging non-volatile memory (NVM), such...
Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of attention in both industry and academia. In this...
Resistive Random Access Memory (ReRAM) is one of the most promising emerging memory technologies as a potential replacement for DRAM memory and/or NAND Flash. Multi-level cell (MLC) ReRAM, which can store multiple bits in a single ReRAM cell, can further improve density and reduce cost-per-bit, and therefore has recently been investigated extensively. However, the majority of the prior studies on...
Emerging non-volatile memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, resistive random-access memory (RRAM) is considered to be the most promising as it operates faster than phase-change memory (PCRAM), and it has simpler and smaller cell...
Through laser ablation process, a diaphragm with mesa structure is fabricated successfully in silicon wafer with Nd:YAG laser machining system. Then the silicon diaphragm is used to make optical fiber Fabry-Perot pressure sensor. The pressure sensing experiment showed the sensor had a good linear response with sensitivity 10.6 nm/kPa at the range 40–240 kPa.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.